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09/05/11 www.irf.com 1 hexfet power mosfet AUIRFS3306 s d g v dss 60v r ds(on) typ. 3.3m max. 4.2m i d (silicon limited) 160a i d (package limited) 120a
automotive grade description specifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. features advanced process technology ultra low on-resistance dynamic dv/dt rating 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rati ngs only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratin gs are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. gds gate drain source d 2 pak AUIRFS3306 s d g d symbol parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 25c continuous drain current, v gs @ 10v (wire bond limited) i dm pulsed drain current p d @t c = 25c maximum power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery v/ns t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) thermal resistance symbol parameter typ. max. units r jc junction-to-case ??? 0.65 r ja junction-to-ambient (pcb mount) ??? 40 a c c/w 300 230 14 -55 to + 175 20 1.5 max. 160 110 620 120 184 see fig. 14, 15, 22a, 22b

2 www.irf.com calculated continuous current based on maximum allowable junction temperature. bond wire current limit is 120a. note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. repetitive rating; pulse width limited by max. junction temperature. limited by t jmax , starting t j = 25c, l = 0.04mh r g = 25 , i as = 96a, v gs =10v. part not recommended for use above this value. s d g i sd 75a, di/dt 1400a/ s, v dd v (br)dss , t j 175c. pulse width 400 s; duty cycle 2%. c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . when mounted on 1" square pcb (fr-4 or g-10 material). for recom mended footprint and soldering techniques refer to application note #an-994.

static electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 60 ??? ??? v ( / / ( ( a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units q g total gate charge ??? 85 120 nc q gs gate-to-source charge ??? 20 ??? q gd gate-to-drain ("miller") charge ??? 26 q sync total gate charge sync. (q g - q gd ) ??? 59 ??? t d(on) turn-on delay time ??? 15 ??? ns t r rise time ??? 76 ??? t d(off) turn-off delay time ??? 40 ??? t f fall time ??? 77 ??? c iss input capacitance ??? 4520 ??? pf c oss output capacitance ??? 500 ??? c rss reverse transfer capacitance ??? 250 ??? c oss eff. (er) effective output capacitance (energy related) ??? 720 ??? c oss eff. (tr) effective output capacitance (time related) ??? 880 ??? diode characteristics symbol parameter min. typ. max. units i s continuous source current ??? ??? 160 a (body diode) i sm pulsed source current ??? ??? 620 a (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 31 ??? ns t j = 25c v r = 51v, ??? 35 ??? t j = 125c i f = 75a q rr reverse recovery charge ??? 34 ??? nc t j = 25c di/dt = 100a/ s ??? 45 ??? t j = 125c i rrm reverse recovery current ??? 1.9 ??? a t j = 25c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v ds = 50v, i d = 75a conditions i d = 75a v gs = 20v v gs = -20v mosfet symbol showing the v ds =30v conditions v gs = 10v v gs = 0v v ds = 50v ? = 1.0mhz, see fig. 5 v gs = 0v, v ds = 0v to 48v , see fig. 11 v gs = 0v, v ds = 0v to 48v t j = 25c, i s = 75a, v gs = 0v integral reverse p-n junction diode. conditions v gs = 0v, i d = 250 a reference to 25c, i d = 5ma v gs = 10v, i d = 75a v ds = v gs , i d = 150 a v ds = 60v, v gs = 0v v ds = 48v, v gs = 0v, t j = 125c i d = 75a r g = 2.7 v dd = 30v i d = 75a, v ds =0v, v gs = 10v

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%*+, $ , !# -. !./.# qualification information ? d 2 pak msl1 rohs compliant yes esd machine model class m4 (+/- >800v) ??? aec-q101-002 human body model class h2 (+/- 3000v) ??? aec-q101-001 charged device model class c5 (+/- >2000v) ??? aec-q101-005 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level

4 www.irf.com fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 4.5v vgs top 15v 10v 8.0v 6.0v 5.5v 5.0v 4.8v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 175c 4.5v vgs top 15v 10v 8.0v 6.0v 5.5v 5.0v 4.8v bottom 4.5v 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 25v 60 s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 75a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 120 140 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v vds= 30v vds= 12v i d = 75a

www.irf.com 5 fig 8. maximum safe operating area fig 10. drain-to-source breakdown voltage fig 7. typical source-drain diode forward voltage fig 11. typical c oss stored energy fig 9. maximum drain current vs. case temperature fig 12. maximum avalanche energy vs. draincurrent 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0 10 20 30 40 50 60 v ds, drain-to-source voltage (v) 0.0 0.5 1.0 1.5 e n e r g y ( j ) 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 50 60 70 80 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e i d = 5ma 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 120 140 160 180 i d , d r a i n c u r r e n t ( a ) limited by package 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 13a 18a bottom 96a

6 www.irf.com 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 13. maximum effective transient thermal impedance, junction-to-case fig 14. typical avalanche current vs.pulsewidth fig 15. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 16a, 16b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av ri (c/w) ? ( j j 1 1 2 2 r 1 r 1 r 2 r 2 c c ci = i / ri 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 40 80 120 160 200 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 96a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming tj = 150c and tstart =25c (single pulse)

www.irf.com 7 0(!/(* /# " fig 16. threshold voltage vs. temperature 0(!1* ./# "
0(!/(* /# " 0(!1* ./# " -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a i d = 1.0ma i d = 250 a id = 150 a 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 4 8 12 16 i r r m - ( a ) i f = 30a v r = 51v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 4 8 12 16 i r r m - ( a ) i f = 45a v r = 51v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 50 100 150 200 250 300 350 q r r - ( n c ) i f = 30a v r = 51v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 50 100 150 200 250 300 350 q r r - ( n c ) i f = 45a v r = 51v t j = 125c t j = 25c

8 www.irf.com fig 23a. switching time test circuit fig 23b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f v gs pulse width < 1 s duty factor < 0.1% v dd v ds l d d.u.t + - fig 22b. unclamped inductive waveforms fig 22a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 24a. gate charge test circuit fig 24b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 21. 2/(/"0* for n-channel hexfet power mosfets
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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period 3
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d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + -

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(dimensions are shown in millimeters (inches))

4* 5 $ 4. * 676 8878282
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10 www.irf.com !
3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

www.irf.com 11 ordering information base part number package type standard pack complete part number form quantity AUIRFS3306 d2pak tube 50 AUIRFS3306 tape and reel left 800 AUIRFS3306trl tape and reel right 800 AUIRFS3306trr

12 www.irf.com
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